Postdoctoral Scientist (2 Positions)

Autonomous atomic layer deposition (ALD) based oxide dielectrics materials and device research for microelectronics and quantum technology

We have openings for two post-doctoral scientists with experience in thin film deposition using atomic layer deposition and an interest in agentic, autonomous robotic synthesis & characterization to carry out research in the areas of: (i) high dielectric constant oxides for low temperature CMOS with a focus on dipole engineering, and (ii), doped oxide thin films for quantum coherent technologies. The positions are described below. The positions will be at the University of Chicago; however the postdoctoral scientists will work at our labs at Argonne and at the University of Chicago and interact closely with Argonne scientists. Position (i) will also involve close interactions with scientists at the Toyota Research Institute of North America in Michigan and position (ii) will involve close interactions with Fermilab scientists and Georgia Tech faculty. Both of these positions offer a new opportunity for carrying out research on fully autonomous ALD systems and processes that utilize robotics for deposition as well as characterization; and the deployment of AI approaches for full loop autonomous systems. Our group works with a large number of collaborators in both quantum information as well as microelectronics—and the postdoctoral scientist will have the opportunity to learn about these fields.

(i)High dielectric constant oxides for low temperature CMOS: Low temperature digital CMOS is an emerging area of interest for classical as well as quantum adjacent applications. Developing stable, high performance high-k dielectrics for MOSFETs operating at low temperatures represents unique scientific challenges. The postdoctoral scientist will work on the synthesis, microstructural characterization as well as low temperature and room temperature electrical characterization of high-k dielectric films and devices (capacitors and MOSFETs). Candidate should be an experimentalist who possesses either a strong device and processing background, and/or a strong thin film material science background (we can teach one part if the candidate is proficient in the other). Experience with atomic layer deposition (ALD) or molecular beam epitaxy (MBE) is highly desirable but not essential if the candidate has strong Ph.D. research experience with other high vacuum based thin film deposition as a key part of her/his research. Experience with software/hardware interfacing and coding is also desirable but not essential.

(ii)Doped oxide thin films for quantum coherent technologies: The goal of this project is to autonomously develop oxide based qubits using atomic layer deposition (ALD) for quantum coherent applications. Research will involve setting up an autonomous ALD and measurement system (working with our current team) and carrying out structural, photonic and spin measurements on these films. Candidate should be an experimentalist with either a strong optical physics background, and/or a strong thin film material scientist with experience in oxides (we can teach one part if the candidate is proficient in the other). Experience with atomic layer deposition (ALD) or molecular beam epitaxy (MBE) is highly desirable but not essential if the candidate has strong Ph.D. research experience with other high vacuum based thin film deposition as a key part of her/his research. Experience with software/hardware interfacing and coding is highly desirable.

Candidates can apply for one or both positions. Applicants should send a detailed CV, and names of 3 references to guha@uchicago.edu